Invention Grant
- Patent Title: Field effect transistor with air gap dielectric
- Patent Title (中): 具有气隙电介质的场效应晶体管
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Application No.: US13537334Application Date: 2012-06-29
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Publication No.: US08349697B2Publication Date: 2013-01-08
- Inventor: Wagdi W. Abadeer , Kiran V. Chatty , Robert J. Gauthier, Jr. , Jed H. Rankin , William R. Tonti , Yun Shi
- Applicant: Wagdi W. Abadeer , Kiran V. Chatty , Robert J. Gauthier, Jr. , Jed H. Rankin , William R. Tonti , Yun Shi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Richard Kotulak
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A field effect transistor (FET) that includes a drain formed in a first plane, a source formed in the first plane, a channel formed in the first plane and between the drain and the source and a gate formed in the first plane. The gate is separated from at least a portion of the body by an air gap. The air gap is also in the first plane.
Public/Granted literature
- US20120264275A1 FIELD EFFECT TRANSISTOR WITH AIR GAP DIELECTRIC Public/Granted day:2012-10-18
Information query
IPC分类:
