Combination of a substrate and a wafer

Invention Grant

US08349701B2 Combination of a substrate and a wafer 有权

Title translation: 基板和晶片的组合

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Patent Title: Combination of a substrate and a wafer
Patent Title (中): 基板和晶片的组合
Application No.: US12916751

Application Date: 2010-11-01
Publication No.: US08349701B2

Publication Date: 2013-01-08
Inventor: Erich Thallner
Applicant: Erich Thallner
Agency: Kusner & Jaffe
Priority: DE102006000687 20060103
Main IPC: H01L21/30
IPC: H01L21/30

Abstract:

The invention pertains to a combination of a substrate (6) and a wafer (15), wherein the substrate (6) and the wafer (15) are arranged parallel to one another and bonded together with the aid of an adhesive layer (8) situated between the substrate (6) and the wafer (15), and wherein the adhesive is chosen such that its adhesive properties are neutralized or at least diminished when a predetermined temperature is exceeded. According to the invention, the adhesive layer (8) is only applied annularly between the substrate (6) and the wafer (15) in the edge region of the wafer (15).

Abstract(Chinese):

本发明涉及衬底（6）和晶片（15）的组合，其中衬底（6）和晶片（15）彼此平行地布置并借助于粘合剂层（8）结合在一起，位于衬底（6）和晶片（15）之间，并且其中选择粘合剂使得当超过预定温度时其粘合性能被中和或至少减小。根据本发明，粘合剂层（8）仅在晶片（15）的边缘区域中环状地施加在基板（6）和晶片（15）之间。

Public/Granted literature

US20110045240A1 COMBINATION OF A SUBSTRATE AND A WAFER Public/Granted day:2011-02-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）