Invention Grant
- Patent Title: Method for manufacturing SOI substrate and SOI substrate
- Patent Title (中): 制造SOI衬底和SOI衬底的方法
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Application No.: US12821545Application Date: 2010-06-23
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Publication No.: US08349704B2Publication Date: 2013-01-08
- Inventor: Naoki Okuno , Akihisa Shimomura , Hajime Tokunaga
- Applicant: Naoki Okuno , Akihisa Shimomura , Hajime Tokunaga
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-152598 20090626
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
A bond substrate is irradiated with accelerated ions to form an embrittled region in the bond substrate; an insulating layer is formed over a surface of the bond substrate or a base substrate; the bond substrate and the base substrate are bonded to each other with the insulating layer interposed therebetween; a region in which the bond substrate and the base substrate are not bonded to each other and which is closed by the bond substrate and the base substrate is formed in parts of the bond substrate and the base substrate; the bond substrate is separated at the embrittled region by heat treatment; and a semiconductor layer is formed over the base substrate.
Public/Granted literature
- US20100330779A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE Public/Granted day:2010-12-30
Information query
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