Invention Grant
- Patent Title: Semiconductor surface protecting method
- Patent Title (中): 半导体表面保护方法
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Application No.: US10595678Application Date: 2004-10-15
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Publication No.: US08349706B2Publication Date: 2013-01-08
- Inventor: Kazuki Noda
- Applicant: Kazuki Noda
- Applicant Address: US MN St. Paul
- Assignee: 3M Innovtive Properties Company
- Current Assignee: 3M Innovtive Properties Company
- Current Assignee Address: US MN St. Paul
- Agent Yen T. Florcak
- Priority: JP2003-382717 20031112
- International Application: PCT/US2004/034134 WO 20041015
- International Announcement: WO2005/053017 WO 20050609
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
Provided are a semiconductor surface protecting method and surface protecting sheet employing a material having adequate conformability for irregularities on semiconductor wafer circuit sides and sufficient rigidity as a support during grinding, and which does not become fluid with repeated temperature increases. Also provided is a surface protecting sheet for protection of the circuit side in the step of back side grinding of a semiconductor wafer, the surface protecting sheet having a polymeric film material with a surface protecting layer thereon that may become fluid upon heating and which hardens upon exposure to radiation or upon heating.
Public/Granted literature
- US20070148916A1 Semiconductor surface protecting sheet and method Public/Granted day:2007-06-28
Information query
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