Invention Grant
US08349706B2 Semiconductor surface protecting method 有权
半导体表面保护方法

  • Patent Title: Semiconductor surface protecting method
  • Patent Title (中): 半导体表面保护方法
  • Application No.: US10595678
    Application Date: 2004-10-15
  • Publication No.: US08349706B2
    Publication Date: 2013-01-08
  • Inventor: Kazuki Noda
  • Applicant: Kazuki Noda
  • Applicant Address: US MN St. Paul
  • Assignee: 3M Innovtive Properties Company
  • Current Assignee: 3M Innovtive Properties Company
  • Current Assignee Address: US MN St. Paul
  • Agent Yen T. Florcak
  • Priority: JP2003-382717 20031112
  • International Application: PCT/US2004/034134 WO 20041015
  • International Announcement: WO2005/053017 WO 20050609
  • Main IPC: H01L21/30
  • IPC: H01L21/30
Semiconductor surface protecting method
Abstract:
Provided are a semiconductor surface protecting method and surface protecting sheet employing a material having adequate conformability for irregularities on semiconductor wafer circuit sides and sufficient rigidity as a support during grinding, and which does not become fluid with repeated temperature increases. Also provided is a surface protecting sheet for protection of the circuit side in the step of back side grinding of a semiconductor wafer, the surface protecting sheet having a polymeric film material with a surface protecting layer thereon that may become fluid upon heating and which hardens upon exposure to radiation or upon heating.
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