Invention Grant
- Patent Title: High speed laser crystallization of particles of photovoltaic solar cells
- Patent Title (中): 光伏太阳能电池颗粒的高速激光结晶
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Application No.: US13113386Application Date: 2011-05-23
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Publication No.: US08349713B2Publication Date: 2013-01-08
- Inventor: Gary J. Cheng , Martin Yi Zhang , Yingling Yang
- Applicant: Gary J. Cheng , Martin Yi Zhang , Yingling Yang
- Applicant Address: US IN West Lafayette
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: US IN West Lafayette
- Agency: Hartman Global IP Law
- Agent Gary M. Hartman; Domenica N. S. Hartman
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A system and method for enhancing the conversion efficiency of thin film photovoltaics. The thin film structure includes a photovoltaic absorbent layer covered by a confinement layer. A laser beam passes through the confinement layer and hits the photovoltaic absorbent layer. The laser can be pulsed to create localized rapid heating and cooling of the photovoltaic absorbent layer. The confinement layer confines the laser induced plasma plume creating a localized high-pressure condition for the photovoltaic absorbent layer. The laser beam can be scanned across specific regions of the thin film structure. The laser beam can be pulsed as a series of short pulses. The photovoltaic absorbent layer can be made of various materials including copper indium diselenide, gallium arsenide, and cadmium telluride. The photovoltaic absorbent layer can be sandwiched between a substrate and the confinement layer, and a molybdenum layer can be between the substrate and the photovoltaic absorbent layer.
Public/Granted literature
- US20120021559A1 HIGH SPEED LASER CRYSTALLIZATION OF PARTICLES OF PHOTOVOLTAIC SOLAR CELLS Public/Granted day:2012-01-26
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