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US08349737B2 Manufacturing method of array substrate using lift-off method 有权
使用剥离方法的阵列基板的制造方法

Manufacturing method of array substrate using lift-off method
Abstract:
A method of forming a pattern includes forming a photoresist pattern on a substrate, forming a first material layer on substantially an entire surface of the substrate including the photoresist pattern, heat-treating the substrate including the first material layer and the photoresist pattern, and forming the pattern by removing the photoresist pattern and the portion of the first material layer on the photoresist pattern. A method of manufacturing an array substrate includes forming a pixel region bounded by gate and data lines, and a thin film transistor; an insulating layer is selectively removed to form a passivation layer using a photoresist pattern as an etching mask; a transparent conductive layer is formed on substantially the entire substrate, and the substrate is heat treated. The photoresist pattern and the portion of the transparent conductive layer on the photoresist pattern are removed by a stripping material.
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