Invention Grant
- Patent Title: Metal precursors for deposition of metal-containing films
- Patent Title (中): 用于沉积含金属膜的金属前体
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Application No.: US13293878Application Date: 2011-11-10
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Publication No.: US08349738B2Publication Date: 2013-01-08
- Inventor: Clement Lansalot-Matras , Christian Dussarrat , Vincent M. Omarjee , Cheng-Fang Hsiao
- Applicant: Clement Lansalot-Matras , Christian Dussarrat , Vincent M. Omarjee , Cheng-Fang Hsiao
- Applicant Address: FR Paris US CA Fremont
- Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,American Air Liquide, Inc.
- Current Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,American Air Liquide, Inc.
- Current Assignee Address: FR Paris US CA Fremont
- Agent Patricia E. McQueeney
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
Public/Granted literature
- US20120122313A1 METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS Public/Granted day:2012-05-17
Information query
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