Conformal etch material and process

Invention Grant

US08349739B2 Conformal etch material and process 有权

Title translation: 保形蚀刻材料和工艺

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Patent Title: Conformal etch material and process
Patent Title (中): 保形蚀刻材料和工艺
Application No.: US12546812

Application Date: 2009-08-25
Publication No.: US08349739B2

Publication Date: 2013-01-08
Inventor: Ching-Yu Chang
Applicant: Ching-Yu Chang
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Haynes and Boone, LLP
Main IPC: H01L21/302
IPC: H01L21/302

Abstract:

The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.

Abstract(Chinese):

本公开提供了蚀刻基板的方法。该方法包括在基板上形成抗蚀剂图案; 将蚀刻化学流体施加到所述基底，其中所述蚀刻化学流体包括扩散控制材料; 去除蚀刻化学液体; 并去除抗蚀剂图案。

Public/Granted literature

US20100055923A1 Conformal Etch Material and Process Public/Granted day:2010-03-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割