Invention Grant
- Patent Title: Method for fabricating light emitting device
- Patent Title (中): 制造发光器件的方法
-
Application No.: US13349387Application Date: 2012-01-12
-
Publication No.: US08349743B2Publication Date: 2013-01-08
- Inventor: Yong Tae Moon
- Applicant: Yong Tae Moon
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2009-0127189 20091218
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.
Public/Granted literature
- US20120115267A1 METHOD FOR FABRICATING LIGHT EMITTING DEVICE Public/Granted day:2012-05-10
Information query
IPC分类:
