Invention Grant
- Patent Title: Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
- Patent Title (中): 包括低k电介质的微电子结构和控制结构中碳分布的方法
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Application No.: US12660294Application Date: 2010-02-23
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Publication No.: US08349746B2Publication Date: 2013-01-08
- Inventor: Bo Xie , Alexandros T. Demos , Daemian Raj , Sure Ngo , Kang Sub Yim
- Applicant: Bo Xie , Alexandros T. Demos , Daemian Raj , Sure Ngo , Kang Sub Yim
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Shirley L. Church Esq.
- Main IPC: H01L21/469
- IPC: H01L21/469
Abstract:
Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.
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