Invention Grant
US08349985B2 Boron-containing hydrogen silsesquioxane polymer, integrated circuit device formed using the same, and associated methods
有权
含硼氢倍半硅氧烷聚合物，使用其形成的集成电路器件及其相关方法
- Patent Title: Boron-containing hydrogen silsesquioxane polymer, integrated circuit device formed using the same, and associated methods
- Patent Title (中): 含硼氢倍半硅氧烷聚合物，使用其形成的集成电路器件及其相关方法
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Application No.: US12458926Application Date: 2009-07-28
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Publication No.: US08349985B2Publication Date: 2013-01-08
- Inventor: Sina Maghsoodi , Shahrokh Motallebi , SangHak Lim , Do-Hyeon Kim
- Applicant: Sina Maghsoodi , Shahrokh Motallebi , SangHak Lim , Do-Hyeon Kim
- Applicant Address: KR Gumi-si, Gyeongsangbuk-do
- Assignee: Cheil Industries, Inc.
- Current Assignee: Cheil Industries, Inc.
- Current Assignee Address: KR Gumi-si, Gyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Main IPC: C08G79/08
- IPC: C08G79/08 ; C08G77/12
Abstract:
A composition includes a boron-containing hydrogen silsesquioxane polymer having a structure that includes: silicon-oxygen-silicon units, and oxygen-boron-oxygen linkages in which the boron is trivalent, wherein two silicon-oxygen-silicon units are covalently bound by an oxygen-boron-oxygen linkage therebetween.
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