Invention Grant
US08350207B2 Radiation image detection apparatus and manufacturing method of radiation image detector with substrate side charge transport layer
有权
具有衬底侧电荷传输层的放射线图像检测器的辐射图像检测装置及其制造方法
- Patent Title: Radiation image detection apparatus and manufacturing method of radiation image detector with substrate side charge transport layer
- Patent Title (中): 具有衬底侧电荷传输层的放射线图像检测器的辐射图像检测装置及其制造方法
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Application No.: US13228748Application Date: 2011-09-09
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Publication No.: US08350207B2Publication Date: 2013-01-08
- Inventor: Fumito Nariyuki , Munetaka Kato , Keiichiro Sato
- Applicant: Fumito Nariyuki , Munetaka Kato , Keiichiro Sato
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sugrue Mion, PLLC
- Priority: JP2007-340007 20071228
- Main IPC: H01J40/14
- IPC: H01J40/14

Abstract:
In a radiation image detection apparatus having a radiation image detector that includes the following stacked in the order listed below: a bias electrode, a photoconductive layer, a substrate side charge transport layer, and an active matrix substrate, the radiation image detector does not include an area adjacent to the interface between the substrate side charge transport layer and photoconductive layer having an oxygen or chlorine element density not less than two times the average density of oxygen or chlorine element in the substrate side charge transport layer.
Public/Granted literature
- US20120001201A1 RADIATION IMAGE DETECTION APPARATUS AND MANUFACTURING METHOD OF RADIATION IMAGE DETECTOR Public/Granted day:2012-01-05
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