Invention Grant
US08350209B2 Production of self-organized pin-type nanostructures, and the rather extensive applications thereof 有权
自组织针型纳米结构的生产及其广泛应用

  • Patent Title: Production of self-organized pin-type nanostructures, and the rather extensive applications thereof
  • Patent Title (中): 自组织针型纳米结构的生产及其广泛应用
  • Application No.: US12089727
    Application Date: 2006-10-10
  • Publication No.: US08350209B2
    Publication Date: 2013-01-08
  • Inventor: Daniel GaeblerKonrad Bach
  • Applicant: Daniel GaeblerKonrad Bach
  • Applicant Address: DE Erfurt
  • Assignee: X-FAB Semiconductor Foundries AG
  • Current Assignee: X-FAB Semiconductor Foundries AG
  • Current Assignee Address: DE Erfurt
  • Agency: Stevens & Showalter LLP
  • Priority: DE102005048359 20051010; DE102005048360 20051010; DE102005048361 20051010; DE102005048362 20051010; DE102005048363 20051010; DE102005048365 20051010
  • International Application: PCT/EP2006/067249 WO 20061010
  • International Announcement: WO2007/042521 WO 20070419
  • Main IPC: H01J3/14
  • IPC: H01J3/14 H01J5/16
Production of self-organized pin-type nanostructures, and the rather extensive applications thereof
Abstract:
The invention relates to methods and devices comprising a nanostructure (2;4,4a) for improving the optical behavior of components and apparatuses and/or improving the behavior of sensors by increasing the active surface area. The nanostructure (2) is produced by means of a special RIE etching process, can be modified regarding the composition of the materials thereof, and can be provided with adequate coatings. The amount of material used for the base layer (3) can be reduced by supplying a buffer layer (406). Many applications are disclosed.
Information query
Patent Agency Ranking
0/0