Invention Grant
- Patent Title: Charged particle beam applied apparatus
- Patent Title (中): 带电粒子束施加装置
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Application No.: US13143404Application Date: 2010-01-04
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Publication No.: US08350214B2Publication Date: 2013-01-08
- Inventor: Hiroki Otaki , Momoyo Enyama , Hiroya Ohta
- Applicant: Hiroki Otaki , Momoyo Enyama , Hiroya Ohta
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2009-006302 20090115
- International Application: PCT/JP2010/000003 WO 20100104
- International Announcement: WO2010/082541 WO 20100722
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01N23/225

Abstract:
Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.
Public/Granted literature
- US20110272576A1 CHARGED PARTICLE BEAM APPLIED APPARATUS Public/Granted day:2011-11-10
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