Invention Grant
- Patent Title: Semiconductor intra-field dose correction
- Patent Title (中): 半导体场内剂量校正
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Application No.: US12509821Application Date: 2009-07-27
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Publication No.: US08350235B2Publication Date: 2013-01-08
- Inventor: Hyung-Rae Lee , Dong Hee Yu , Sohan Singh Mehta , Niall Shepherd , Daniel A Corliss
- Applicant: Hyung-Rae Lee , Dong Hee Yu , Sohan Singh Mehta , Niall Shepherd , Daniel A Corliss
- Applicant Address: US TX Austin US NY Armonk KR Suwon-Si SG Singapore
- Assignee: Freescale Semiconductor,International Business Machines Corporation,Samsung Electronics Co., Ltd.,Globalfoundries Singapore Pte., Ltd.
- Current Assignee: Freescale Semiconductor,International Business Machines Corporation,Samsung Electronics Co., Ltd.,Globalfoundries Singapore Pte., Ltd.
- Current Assignee Address: US TX Austin US NY Armonk KR Suwon-Si SG Singapore
- Agency: F. Chau & Associates, LLC
- Main IPC: G21K5/10
- IPC: G21K5/10

Abstract:
A system and method are provided for automatic dose-correction recipe generation, the system including a dose-correction recipe generator, a reticle data unit in signal communication with the recipe generator, a slit data unit in signal communication with the recipe generator, a process data unit in signal communication with the recipe generator, a wafer data unit in signal communication with the recipe generator, a control unit in signal communication with the recipe generator, and an output unit or a storage unit in signal communication with the control unit; and the method including receiving a current reticle data set and a previous reticle data set, receiving a current slit data set and a previous slit data set, receiving a process condition, receiving a wafer condition, automatically generating a dose-correction recipe in accordance with the received reticle, slit, process and wafer information, and controlling a dose in accordance with the generated recipe.
Public/Granted literature
- US20110017926A1 SEMICONDUCTOR INTRA-FIELD DOSE CORRECTION Public/Granted day:2011-01-27
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