Invention Grant
US08350244B2 Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device
失效
可变电阻器件，可变电阻器件的制造方法以及使用可变电阻器件的半导体存储器件
- Patent Title: Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device
- Patent Title (中): 可变电阻器件，可变电阻器件的制造方法以及使用可变电阻器件的半导体存储器件
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Application No.: US12785763Application Date: 2010-05-24
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Publication No.: US08350244B2Publication Date: 2013-01-08
- Inventor: Hideyuki Noshiro
- Applicant: Hideyuki Noshiro
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A variable resistance device includes a first electrode including a transition metal nitride film, a second electrode including a precious metal or a precious metal oxide, and a transition metal oxide film interposed between the first and second electrodes.
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