Invention Grant
US08350245B2 Variable resistance element and nonvolatile semiconductor memory device using the same 有权
可变电阻元件和使用其的非易失性半导体存储器件

  • Patent Title: Variable resistance element and nonvolatile semiconductor memory device using the same
  • Patent Title (中): 可变电阻元件和使用其的非易失性半导体存储器件
  • Application No.: US13133809
    Application Date: 2009-12-08
  • Publication No.: US08350245B2
    Publication Date: 2013-01-08
  • Inventor: Kiyotaka Tsuji
  • Applicant: Kiyotaka Tsuji
  • Applicant Address: JP Osaka
  • Assignee: Panasonic Corporation
  • Current Assignee: Panasonic Corporation
  • Current Assignee Address: JP Osaka
  • Agency: Wenderoth, Lind & Ponack, LLP
  • Priority: JP2008-314026 20081210
  • International Application: PCT/JP2009/006698 WO 20091208
  • International Announcement: WO2010/067585 WO 20100617
  • Main IPC: H01L29/02
  • IPC: H01L29/02
Variable resistance element and nonvolatile semiconductor memory device using the same
Abstract:
To provide a variable resistance element capable of preventing the interface resistance, in a side of the variable resistance element in which resistance change is not allowed, from changing to high resistance due to applied voltage. The variable resistance element is configured by providing a variable resistance film (265) between a first electrode (280) and a second electrode (250), the oxygen concentration within the film of the variable resistance film (265) is high at the side of an interface with the second electrode (250) (high-concentration variable resistance layer (260)) and low at the side of an interface with the first electrode (280) (low-concentration variable resistance layer (270)), and the junction surface area between the low-concentration variable resistance layer (270) and the first electrode (280) is larger than the interface surface area between the high-concentration variable resistance layer (260) and the second electrode (250).
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