Invention Grant
US08350245B2 Variable resistance element and nonvolatile semiconductor memory device using the same
有权
可变电阻元件和使用其的非易失性半导体存储器件
- Patent Title: Variable resistance element and nonvolatile semiconductor memory device using the same
- Patent Title (中): 可变电阻元件和使用其的非易失性半导体存储器件
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Application No.: US13133809Application Date: 2009-12-08
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Publication No.: US08350245B2Publication Date: 2013-01-08
- Inventor: Kiyotaka Tsuji
- Applicant: Kiyotaka Tsuji
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, LLP
- Priority: JP2008-314026 20081210
- International Application: PCT/JP2009/006698 WO 20091208
- International Announcement: WO2010/067585 WO 20100617
- Main IPC: H01L29/02
- IPC: H01L29/02

Abstract:
To provide a variable resistance element capable of preventing the interface resistance, in a side of the variable resistance element in which resistance change is not allowed, from changing to high resistance due to applied voltage. The variable resistance element is configured by providing a variable resistance film (265) between a first electrode (280) and a second electrode (250), the oxygen concentration within the film of the variable resistance film (265) is high at the side of an interface with the second electrode (250) (high-concentration variable resistance layer (260)) and low at the side of an interface with the first electrode (280) (low-concentration variable resistance layer (270)), and the junction surface area between the low-concentration variable resistance layer (270) and the first electrode (280) is larger than the interface surface area between the high-concentration variable resistance layer (260) and the second electrode (250).
Public/Granted literature
- US20110240942A1 VARIABLE RESISTANCE ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE USING THE SAME Public/Granted day:2011-10-06
Information query
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