Invention Grant
- Patent Title: Structure of porous low-k layer and interconnect structure
- Patent Title (中): 多孔低k层和互连结构的结构
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Application No.: US13038612Application Date: 2011-03-02
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Publication No.: US08350246B2Publication Date: 2013-01-08
- Inventor: Mei-Ling Chen , Kuo-Chih Lai , Su-Jen Sung , Chien-Chung Huang , Yu-Tsung Lai
- Applicant: Mei-Ling Chen , Kuo-Chih Lai , Su-Jen Sung , Chien-Chung Huang , Yu-Tsung Lai
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L33/16
- IPC: H01L33/16 ; H01L21/443
Abstract:
A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer.
Public/Granted literature
- US20110147948A1 FORMING METHOD AND STRUCTURE OF POROUS LOW-K LAYER, INTERCONNECT PROCESS AND INTERCONNECT STRUCTURE Public/Granted day:2011-06-23
Information query
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