A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.