发明授权
- 专利标题： Semiconductor device including a transistor, and manufacturing method of the semiconductor device
- 专利标题（中）： 包括晶体管的半导体器件和半导体器件的制造方法
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申请号： US12699976申请日： 2010-02-04
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公开(公告)号： US08350261B2公开(公告)日： 2013-01-08
- 发明人: Junichiro Sakata , Hiromichi Godo , Takashi Shimazu
- 申请人： Junichiro Sakata , Hiromichi Godo , Takashi Shimazu
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-030971 20090213
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
The object is to suppress deterioration in electrical characteristics in a semiconductor device comprising a transistor including an oxide semiconductor layer. In a transistor in which a channel layer is formed using an oxide semiconductor, a p-type silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the p-type silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the p-type silicon layer is not provided.