Invention Grant
US08350279B2 Light emitting diode having AlInGaP active layer and method of fabricating the same
有权
具有AlInGaP有源层的发光二极管及其制造方法
- Patent Title: Light emitting diode having AlInGaP active layer and method of fabricating the same
- Patent Title (中): 具有AlInGaP有源层的发光二极管及其制造方法
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Application No.: US12442511Application Date: 2007-09-04
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Publication No.: US08350279B2Publication Date: 2013-01-08
- Inventor: Chung Hoon Lee , Jae Ho Lee , Mi Hae Kim
- Applicant: Chung Hoon Lee , Jae Ho Lee , Mi Hae Kim
- Applicant Address: KR Ansan-si
- Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2006-0092828 20060925; KR10-2006-0094243 20060927
- International Application: PCT/KR2007/004241 WO 20070904
- International Announcement: WO2008/038910 WO 20080403
- Main IPC: H01L29/26
- IPC: H01L29/26 ; H01L29/22

Abstract:
A light emitting diode having an AlInGaP active layer and a method of fabricating the same are disclosed. The light emitting diode includes a substrate. A plurality of light emitting cells are positioned to be spaced apart from one another, wherein each of the light emitting cells has a first conductive-type lower semiconductor layer, an AlInGaP active layer and a second conductive-type upper semiconductor layer. Meanwhile, a semi-insulating layer is interposed between the substrate and the light emitting cells. Further, wires connect the plurality of light emitting cells in series. Accordingly, it is possible to provide a light emitting diode, in which a plurality of light emitting cells are connected in series to one another through wires to be driven by an AC power source.
Public/Granted literature
- US20090272991A1 LIGHT EMITTING DIODE HAVING AlInGaP ACTIVE LAYER AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-11-05
Information query
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