Invention Grant
- Patent Title: Semiconductor light-emitting device and method for manufacturing same
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Application No.: US12710829Application Date: 2010-02-23
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Publication No.: US08350285B2Publication Date: 2013-01-08
- Inventor: Yoshiaki Sugizaki , Akihiro Kojima , Susumu Obata
- Applicant: Yoshiaki Sugizaki , Akihiro Kojima , Susumu Obata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-220434 20090925
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.
Public/Granted literature
- US20110073889A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-03-31
Information query
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