Invention Grant
- Patent Title: Field effect transistor and method of manufacturing the same
- Patent Title (中): 场效应晶体管及其制造方法
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Application No.: US12648564Application Date: 2009-12-29
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Publication No.: US08350293B2Publication Date: 2013-01-08
- Inventor: Tat-Sing Paul Chow , Takehiko Nomura , Yuki Niiyama , Hiroshi Kambayashi , Seikoh Yoshida
- Applicant: Tat-Sing Paul Chow , Takehiko Nomura , Yuki Niiyama , Hiroshi Kambayashi , Seikoh Yoshida
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Lowe Hauptman Ham & Berner LLP
- Main IPC: H01L29/08
- IPC: H01L29/08
Abstract:
A p-type nitride compound semiconductor layer is formed on a buffer formed on a substrate. An n-type contact region is formed by ion implantation under a source electrode and a drain electrode. An electric-field reducing layer made of an n-type nitride compound semiconductor is formed on the p-type nitride compound semiconductor layer. A carrier density of the electric-field reducing layer is lower than that of the n-type contact region. A first end portion of the electric-field reducing layer contacts with the n-type contact region, and a second end portion of the electric-field reducing layer overlaps with a gate electrode.
Public/Granted literature
- US20100219451A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-09-02
Information query
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