Invention Grant
- Patent Title: Compensated gate MISFET and method for fabricating the same
- Patent Title (中): 补偿栅极MISFET及其制造方法
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Application No.: US12756906Application Date: 2010-04-08
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Publication No.: US08350294B2Publication Date: 2013-01-08
- Inventor: Alexander Lidow , Robert Beach , Jianjun Cao , Alana Nakata , Guang Yuan Zhao
- Applicant: Alexander Lidow , Robert Beach , Jianjun Cao , Alana Nakata , Guang Yuan Zhao
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In another embodiment, the gate leakage is reduced by employing a semi-insulating layer below the gate contact and above the barrier layer.
Public/Granted literature
- US20100258848A1 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-10-14
Information query
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