Invention Grant
US08350299B2 Memory with high dielectric constant antifuses adapted for use at low voltage
有权
具有适用于低电压使用的高介电常数反熔丝的存储器
- Patent Title: Memory with high dielectric constant antifuses adapted for use at low voltage
- Patent Title (中): 具有适用于低电压使用的高介电常数反熔丝的存储器
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Application No.: US12836320Application Date: 2010-07-14
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Publication No.: US08350299B2Publication Date: 2013-01-08
- Inventor: Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
- Applicant: Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.
Public/Granted literature
- US20100276660A1 MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE Public/Granted day:2010-11-04
Information query
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