Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12975406Application Date: 2010-12-22
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Publication No.: US08350311B2Publication Date: 2013-01-08
- Inventor: Yoshiyuki Kaneko , Hiroyasu Noso , Katsuhiko Hotta , Shinichi Ishida , Hidenori Suzuki , Sadayoshi Tateishi
- Applicant: Yoshiyuki Kaneko , Hiroyasu Noso , Katsuhiko Hotta , Shinichi Ishida , Hidenori Suzuki , Sadayoshi Tateishi
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2009-295242 20091225
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/8242
Abstract:
The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in an insulating film over the main surface of a semiconductor substrate; and the upper electrode is comprised of a film stack of a TiN film (lower metal film) and a Ti film (cap metal film) formed over the TiN film (lower metal film).
Public/Granted literature
- US20110156208A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-06-30
Information query
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