Memory devices capable of reducing lateral movement of charges

Invention Grant

US08350315B2 Memory devices capable of reducing lateral movement of charges 有权

Title translation: 能够减少电荷横向移动的存储器件

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Patent Title: Memory devices capable of reducing lateral movement of charges
Patent Title (中): 能够减少电荷横向移动的存储器件
Application No.: US12461612

Application Date: 2009-08-18
Publication No.: US08350315B2

Publication Date: 2013-01-08
Inventor: Kwang-soo Seol
Applicant: Kwang-soo Seol
Applicant Address: KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-do
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2008-0081072 20080819
Main IPC: H01L29/788
IPC: H01L29/788 ; H01L29/792

Memory devices capable of reducing lateral movement of charges

Abstract:

Memory devices include a tunneling insulating layer disposed on a substrate, a charge storage layer disposed on the tunneling insulating layer, a blocking insulating layer disposed on the charge storage layer and a control gate electrode disposed on the blocking insulating layer. The control gate electrode may have an edge portion spaced farther apart from the blocking insulating layer than a central portion of the control gate electrode to concentrate charge density distribution on a central portion of a memory cell.

Abstract(Chinese):

存储器件包括设置在衬底上的隧道绝缘层，设置在隧道绝缘层上的电荷存储层，设置在电荷存储层上的阻挡绝缘层和设置在阻挡绝缘层上的控制栅电极。与控制栅极的中心部分相比，控制栅电极可以具有与阻挡绝缘层相距更远的边缘部分，以将电荷密度分布集中在存储器单元的中心部分上。

Public/Granted literature

US20100044779A1 Memory devices capable of reducing lateral movement of charges Public/Granted day:2010-02-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/788	......带有浮栅的