Invention Grant
US08350321B2 Semiconductor device having saddle fin transistor and manufacturing method of the same
失效
具有鞍形鳍式晶体管的半导体器件及其制造方法
- Patent Title: Semiconductor device having saddle fin transistor and manufacturing method of the same
- Patent Title (中): 具有鞍形鳍式晶体管的半导体器件及其制造方法
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Application No.: US12494241Application Date: 2009-06-29
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Publication No.: US08350321B2Publication Date: 2013-01-08
- Inventor: Kyu tae Kim
- Applicant: Kyu tae Kim
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2009-0017600 20090302
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
The present invention discloses a transistor having the saddle fin structure. The saddle fin transistor of the present invention has a structure in which a landing plug contact region, particularly, a landing plug contact region on an isolation layer is elevated such that the landing plug contact SAC (Self Aligned Contact) fail can be prevented.
Public/Granted literature
- US20100219467A1 SEMICONDUCTOR DEVICE HAVING SADDLE FIN TRANSISTOR AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2010-09-02
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