Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13070684Application Date: 2011-03-24
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Publication No.: US08350323B2Publication Date: 2013-01-08
- Inventor: Noriaki Mikasa
- Applicant: Noriaki Mikasa
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JPP2010-073287 20100326
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A semiconductor device may include, but is not limited to: a semiconductor substrate; a bit line; and a contact portion. The semiconductor substrate has a first groove having at least first and second side surfaces facing each other. The bit line is positioned in the first groove. The bit line is insulated from the semiconductor substrate. The contact portion is positioned in the first groove. The contact portion is electrically connected to the bit line. The contact portion contacts the first side surface of the first groove. The contact portion is insulated from the second side surface of the first groove.
Public/Granted literature
- US20110233662A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-29
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