Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US12839895Application Date: 2010-07-20
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Publication No.: US08350326B2Publication Date: 2013-01-08
- Inventor: Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Hideaki Aochi
- Applicant: Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Hideaki Aochi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-067582 20100324
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device includes first and second stacked structural bodies, first and second semiconductor pillars, a memory unit connection portion, a selection unit stacked structural body, first and second selection unit semiconductor pillars, a selection unit connection portion, and first to fifth interconnections. The semiconductor pillars pierce the stacked structural bodies. The first and second interconnections are connected to the first and second semiconductor pillars, respectively. The memory unit connection portion connects the first and second semiconductor pillars. The selection unit semiconductor pillars pierce the selection unit stacked structural body. The third and fourth interconnections are connected to the first and second selection unit semiconductor pillars, respectively. The selection unit connection portion connects the first and second selection unit semiconductor pillars. The fifth interconnection is connected to the third interconnection on a side opposite to the selection unit stacked structural body.
Public/Granted literature
- US20110233644A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-09-29
Information query
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