Invention Grant
- Patent Title: Stress film forming method and stress film structure
- Patent Title (中): 应力膜成型方法和应力膜结构
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Application No.: US13158541Application Date: 2011-06-13
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Publication No.: US08350334B2Publication Date: 2013-01-08
- Inventor: Chun-Min Wang , An-Chi Liu , Hsin-Hsing Chen , Chih-Chun Wang
- Applicant: Chun-Min Wang , An-Chi Liu , Hsin-Hsing Chen , Chih-Chun Wang
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A stress film forming method is used in a fabrication process of a semiconductor device. Firstly, a substrate is provided, wherein a first-polarity-channel MOSFET and a second-polarity-channel MOSFET are formed on the substrate. Then, at least one deposition-curing cycle process is performed to form a cured stress film over the first-polarity-channel MOSFET and the second-polarity-channel MOSFET. Afterwards, an additional deposition process is performed form a non-cured stress film on the cured stress film, wherein the cured stress film and the non-cured stress film are collectively formed as a seamless stress film.
Public/Granted literature
- US20120313181A1 STRESS FILM FORMING METHOD AND STRESS FILM STRUCTURE Public/Granted day:2012-12-13
Information query
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