Invention Grant
US08350335B2 Semiconductor device including off-set spacers formed as a portion of the sidewall
有权
包括形成为侧壁的一部分的偏置间隔物的半导体器件
- Patent Title: Semiconductor device including off-set spacers formed as a portion of the sidewall
- Patent Title (中): 包括形成为侧壁的一部分的偏置间隔物的半导体器件
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Application No.: US12101568Application Date: 2008-04-11
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Publication No.: US08350335B2Publication Date: 2013-01-08
- Inventor: Yoshiaki Kikuchi
- Applicant: Yoshiaki Kikuchi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2007-108953 20070418; JP2008-060164 20080310
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A method of manufacturing a semiconductor device that includes forming a dummy gate insulating film and a dummy gate electrode on a semiconductor substrate having a channel-forming region. An etching treatment including a first treatment of treating the surface of the exposed surface of the insulating layer with an etching gas containing ammonia and hydrogen fluoride and a second treatment of decomposing and evaporating the product formed in the first treatment are included in removal step of the dummy gate insulating film.
Public/Granted literature
- US20080258216A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-10-23
Information query
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