Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13044766Application Date: 2011-03-10
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Publication No.: US08350344B2Publication Date: 2013-01-08
- Inventor: Jung-Min Son , Woon-Kyung Lee
- Applicant: Jung-Min Son , Woon-Kyung Lee
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0021370 20100310
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/336 ; H01L21/3205 ; H01L21/4763 ; H01L21/44
Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a charge storage structure and a gate. The charge storage structure is formed on a substrate. The gate is formed on the charge storage structure. The gate includes a lower portion formed of silicon and an upper portion formed of metal silicide. The upper portion of the gate has a width greater than that of the lower portion of the gate.
Public/Granted literature
- US20110220985A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-09-15
Information query
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