Invention Grant
- Patent Title: Bipolar transistor
- Patent Title (中): 双极晶体管
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Application No.: US12611074Application Date: 2009-11-02
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Publication No.: US08350352B2Publication Date: 2013-01-08
- Inventor: William Allan Lane , Andrew David Bain , Derek Frederick Bowers , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson
- Applicant: William Allan Lane , Andrew David Bain , Derek Frederick Bowers , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.
Public/Granted literature
- US08120136B2 Bipolar transistor Public/Granted day:2012-02-21
Information query
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