Invention Grant
- Patent Title: Semiconductor device using an aluminum interconnect to form through-silicon vias
- Patent Title (中): 使用铝互连的半导体器件形成硅通孔
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Application No.: US12539105Application Date: 2009-08-11
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Publication No.: US08350359B2Publication Date: 2013-01-08
- Inventor: Kevin S. Petrarca , Matthew Angyal , Lawrence A. Clevenger , Carl Radens , Brian C. Sapp
- Applicant: Kevin S. Petrarca , Matthew Angyal , Lawrence A. Clevenger , Carl Radens , Brian C. Sapp
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent H. Daniel Schnurmann
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/40
Abstract:
An aluminum lateral interconnect of a Back End of the Line (BEOL) is used to define the x and y dimensions of a through-silicon via in a semiconductor chip formed in a silicon substrate. The TSV includes one or more aluminum annulus formed on a surface of the substrate, and a deep trench in the substrate having a diameter that is determined by the diameter of the aluminum annulus. The annulus can also be provided with a conductive strap upon which a capacitor can be formed. The strap can also be used to provide a connection of the TSV to other BEOL interconnects.
Public/Granted literature
- US20110037143A1 Semiconductor Device Using An Aluminum Interconnect To Form Through-Silicon Vias Public/Granted day:2011-02-17
Information query
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