发明授权
- 专利标题： Semiconductor integrated circuit and method for fabricating the same
- 专利标题（中）： 半导体集成电路及其制造方法
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申请号： US12831341申请日： 2010-07-07
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公开(公告)号： US08350362B2公开(公告)日： 2013-01-08
- 发明人: Sang-Jin Byeon , Jun-Gi Choi
- 申请人： Sang-Jin Byeon , Jun-Gi Choi
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2010-0050497 20100528
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
A semiconductor integrated circuit includes: a semiconductor chip; a through-chip via passing through a conductive pattern disposed in the semiconductor chip and cutting the conductive pattern; and an insulation pattern disposed on an outer circumference surface of the through-chip via to insulate the conductive pattern from the through-chip via.
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