Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12662572Application Date: 2010-04-23
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Publication No.: US08350371B2Publication Date: 2013-01-08
- Inventor: Motoharu Haga , Shoji Yasunaga , Yasumasa Kasuya
- Applicant: Motoharu Haga , Shoji Yasunaga , Yasumasa Kasuya
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-106906 20090424
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/488
Abstract:
The semiconductor device according to the present invention includes a semiconductor chip, a solid plate to which the semiconductor chip is bonded, and a bonding member made of a BiSn-based material interposed between the semiconductor chip and the solid plate, while the bonding member has a heat conduction path made of Ag for improving heat conductivity between the semiconductor chip and the solid plate.
Public/Granted literature
- US20100270666A1 Semiconductor device and method of manufacturing semiconductor device Public/Granted day:2010-10-28
Information query
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