Invention Grant
- Patent Title: Semiconductor device having recess with varying width and method of manufacturing the same
- Patent Title (中): 具有变化宽度的凹部的半导体器件及其制造方法
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Application No.: US12689680Application Date: 2010-01-19
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Publication No.: US08350392B2Publication Date: 2013-01-08
- Inventor: Hirotomo Yanagisawa , Kinya Otani
- Applicant: Hirotomo Yanagisawa , Kinya Otani
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2009-010659 20090121
- Main IPC: H01L23/31
- IPC: H01L23/31
Abstract:
A semiconductor device includes a semiconductor chip, and an encapsulation resin which covers and encapsulates the semiconductor chip, the semiconductor chip having a recess formed in the surficial portion thereof; the recess having, on the deeper side than a predetermined portion thereof, a portion having a larger width than the predetermined portion has; and the encapsulation resin being anchored in the recess.
Public/Granted literature
- US20100181688A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-22
Information query
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