Invention Grant
- Patent Title: High voltage power supply apparatus
- Patent Title (中): 高压电源装置
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Application No.: US12656087Application Date: 2010-01-15
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Publication No.: US08350407B2Publication Date: 2013-01-08
- Inventor: Jong-hwa Cho , Joong-gi Kwon , Jong-yang Choo , Chul-woo Oh
- Applicant: Jong-hwa Cho , Joong-gi Kwon , Jong-yang Choo , Chul-woo Oh
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Staas & Halsey LLP
- Priority: KR10-2007-0070770 20070713
- Main IPC: H02J1/10
- IPC: H02J1/10

Abstract:
A high voltage power supply apparatus comprising a first circuit disposed on a prepared substrate, and for receiving a first voltage and generating a second voltage that is previously set according to the first voltage, and a second circuit for amplifying and rectifying the second voltage to generate a plurality of high voltage signals, wherein the first circuit and the second circuit are embodied as a single module, wherein at least a portion of the single module is surrounded by an insulator.
Public/Granted literature
- US20100172672A1 High voltage power supply apparatus Public/Granted day:2010-07-08
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