Invention Grant
US08350445B1 Bulk acoustic resonator comprising non-piezoelectric layer and bridge 有权
包括非压电层和桥的体声波谐振器

Bulk acoustic resonator comprising non-piezoelectric layer and bridge
Abstract:
A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.
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