Invention Grant
- Patent Title: Bulk acoustic resonator comprising non-piezoelectric layer and bridge
- Patent Title (中): 包括非压电层和桥的体声波谐振器
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Application No.: US13168101Application Date: 2011-06-24
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Publication No.: US08350445B1Publication Date: 2013-01-08
- Inventor: Alexandre Shirakawa , Dariusz Burak , Phil Nikkel
- Applicant: Alexandre Shirakawa , Dariusz Burak , Phil Nikkel
- Applicant Address: SG Singapore
- Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H03H9/25
- IPC: H03H9/25

Abstract:
A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.
Public/Granted literature
- US20120319534A1 BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER AND BRIDGE Public/Granted day:2012-12-20
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