Invention Grant
- Patent Title: Field electron emission source
- Patent Title (中): 场电子发射源
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Application No.: US12180210Application Date: 2008-07-25
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Publication No.: US08350459B2Publication Date: 2013-01-08
- Inventor: Li Qian , Liang Liu , Shou-Shan Fan
- Applicant: Li Qian , Liang Liu , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN200710124827 20071205
- Main IPC: H01J1/46
- IPC: H01J1/46 ; H01J1/52 ; H01J17/04 ; H01J17/12 ; H01J19/38 ; H01J19/40 ; H01J21/10

Abstract:
A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.
Public/Granted literature
- US20090146547A1 FIELD ELECTRON EMISSION SOURCE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-06-11
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