Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13369063Application Date: 2012-02-08
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Publication No.: US08350609B2Publication Date: 2013-01-08
- Inventor: Masahiro Araki , Atsuhiko Ishibashi
- Applicant: Masahiro Araki , Atsuhiko Ishibashi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-048854 20110320
- Main IPC: H03K5/12
- IPC: H03K5/12

Abstract:
The present invention provides a semiconductor device in which an adjustable range of a resistance value of a variable resistance circuit is large. The semiconductor device has an output buffer including a plurality of sets of resistance elements and a plurality of sets of transistors, a plurality of replica circuits, and a plurality of sets of operational amplifiers, and drain currents of the plurality of sets of transistors are adjusted so that output impedances of the output buffer become predetermined values. Therefore, even in the case where the resistance values of the resistance elements largely fluctuate due to fluctuations in manufacture process and the like, the output impedances can be set to predetermined values.
Public/Granted literature
- US20120229197A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-09-13
Information query
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