Invention Grant
US08350937B2 Solid-state imaging device having pixels including avalanche photodiodes
失效
具有包括雪崩光电二极管的像素的固态成像装置
- Patent Title: Solid-state imaging device having pixels including avalanche photodiodes
- Patent Title (中): 具有包括雪崩光电二极管的像素的固态成像装置
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Application No.: US12655691Application Date: 2010-01-04
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Publication No.: US08350937B2Publication Date: 2013-01-08
- Inventor: John Rennie
- Applicant: John Rennie
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: JPP2009-000283 20090105
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335 ; H01L31/107
Abstract:
A solid-state imaging device includes: an avalanche photodiode having a structure including an n+ region, a p+ region, and an avalanche region interposed between the n+ region and the p+ region, all of which are formed to extend in a thickness direction of a semiconductor base; and a pixel repeatedly having the structure of the avalanche photodiode.
Public/Granted literature
- US20100177223A1 Solid-state imaging device and camera Public/Granted day:2010-07-15
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