Invention Grant
- Patent Title: Tunneling magnetoresistance read head having a cofe interface layer and methods for producing the same
- Patent Title (中): 具有cofe界面层的隧道磁阻读取头及其制造方法
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Application No.: US12948072Application Date: 2010-11-17
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Publication No.: US08351163B2Publication Date: 2013-01-08
- Inventor: Koji Sakamoto , Koichi Nishioka
- Applicant: Koji Sakamoto , Koichi Nishioka
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Priority: JP2009-280406 20091210
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0≦x≦15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.
Public/Granted literature
- US20110141613A1 TUNNELING MAGNETORESISTANCE READ HEAD HAVING A COFE INTERFACE LAYER AND METHODS FOR PRODUCING THE SAME Public/Granted day:2011-06-16
Information query
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