Invention Grant
US08351164B2 Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O
有权
具有由M1M2O表示的游离和/或钉扎层磁性化合物的磁阻元件
- Patent Title: Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O
- Patent Title (中): 具有由M1M2O表示的游离和/或钉扎层磁性化合物的磁阻元件
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Application No.: US13454846Application Date: 2012-04-24
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Publication No.: US08351164B2Publication Date: 2013-01-08
- Inventor: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- Applicant: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JP2006-265550 20060928
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11C11/16
Abstract:
An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.
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