Invention Grant
US08351226B2 Rectifier circuit, semiconductor device using the rectifier circuit, and driving method thereof
有权
整流电路,使用整流电路的半导体装置及其驱动方法
- Patent Title: Rectifier circuit, semiconductor device using the rectifier circuit, and driving method thereof
- Patent Title (中): 整流电路,使用整流电路的半导体装置及其驱动方法
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Application No.: US11905699Application Date: 2007-10-03
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Publication No.: US08351226B2Publication Date: 2013-01-08
- Inventor: Takeshi Osada
- Applicant: Takeshi Osada
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-274567 20061006
- Main IPC: H02H7/125
- IPC: H02H7/125 ; H02M1/12

Abstract:
An object of the present invention is to provide a rectifier circuit which can suppress loss of power due to parasitic capacitance or parasitic inductance of a semiconductor element. The rectifier circuit matches or mismatches impedance between a circuit of a previous stage and the rectifier circuit in accordance with the amplitude of an input AC voltage. When an AC voltage to be input has a smaller amplitude than a predetermined voltage, impedance is matched and the AC voltage is applied as is to the rectifier circuit. Conversely, when an AC voltage to be input has a larger amplitude than a predetermined voltage, impedance is mismatched, and the amplitude of the AC voltage is decreased by reflection and then the AC voltage is applied to the rectifier circuit.
Public/Granted literature
- US20080083969A1 Rectifier circuit, semiconductor device using the rectifier circuit, and driving method thereof Public/Granted day:2008-04-10
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