Invention Grant
US08351239B2 Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
有权
用于读取和表征电阻式存储器阵列的动态感测电流供应电路及相关方法
- Patent Title: Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
- Patent Title (中): 用于读取和表征电阻式存储器阵列的动态感测电流供应电路及相关方法
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Application No.: US12604915Application Date: 2009-10-23
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Publication No.: US08351239B2Publication Date: 2013-01-08
- Inventor: Young W. Kim , Glen Rosendale
- Applicant: Young W. Kim , Glen Rosendale
- Applicant Address: US MA Woburn
- Assignee: Nantero Inc.
- Current Assignee: Nantero Inc.
- Current Assignee Address: US MA Woburn
- Agency: Nantero Inc.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A dynamic sense current supply circuit and an associated method for rapidly characterizing a resistive memory array is disclosed. In one embodiment, the disclosed circuit comprises a first and second dynamically programmable current mirror sub-circuit. Responsive to a bank of control signals, each dynamically programmable current mirror sub-circuit provides a dynamically adjustable current scaling factor. These scaling factors are used to scale a supplied reference current to generate a plurality of sense currents which can be used within a plurality of read operations on a resistive memory array. A digital circuit is also provided to sense and store the result of each read operation.
Public/Granted literature
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