Invention Grant
US08351241B2 Rectification element and method for resistive switching for non volatile memory device
有权
用于非易失性存储器件的电阻式开关的整流元件和方法
- Patent Title: Rectification element and method for resistive switching for non volatile memory device
- Patent Title (中): 用于非易失性存储器件的电阻式开关的整流元件和方法
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Application No.: US12826653Application Date: 2010-06-29
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Publication No.: US08351241B2Publication Date: 2013-01-08
- Inventor: Wei Lu , Sung Hyun Jo
- Applicant: Wei Lu , Sung Hyun Jo
- Applicant Address: US MI Ann Arbor
- Assignee: The Regents of the University of Michigan
- Current Assignee: The Regents of the University of Michigan
- Current Assignee Address: US MI Ann Arbor
- Agency: Reising Ethington P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/15

Abstract:
A method of suppressing propagation of leakage current in an array of switching devices. The method includes providing a dielectric breakdown element integrally and serially connected to a switching element within each of the switching device. A read voltage (for example) is applied to a selected cell. The propagation of leakage current is suppressed by each of the dielectric breakdown element in unselected cells in the array. The read voltage is sufficient to cause breakdown in the selected cells but insufficient to cause breakdown in the serially connected, unselected cells in a specific embodiment. Methods to fabricate of such devices and to program, to erase and to read the device are provided.
Public/Granted literature
- US20110317470A1 RECTIFICATION ELEMENT AND METHOD FOR RESISTIVE SWITCHING FOR NON VOLATILE MEMORY DEVICE Public/Granted day:2011-12-29
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