Invention Grant
- Patent Title: Thin film magnetic memory device capable of conducting stable data read and write operations
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Application No.: US13177301Application Date: 2011-07-06
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Publication No.: US08351253B2Publication Date: 2013-01-08
- Inventor: Hideto Hidaka
- Applicant: Hideto Hidaka
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2001-128962 20010426; JP2001-243983 20010810
- Main IPC: G11C11/14
- IPC: G11C11/14 ; G11C11/15 ; G11C11/00
Abstract:
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.
Public/Granted literature
- US20110260224A1 THIN FILM MAGNETIC MEMORY DEVICE CAPABLE OF CONDUCTING STABLE DATA READ AND WRITE OPERATIONS Public/Granted day:2011-10-27
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