Invention Grant
- Patent Title: Flash memory device and program method thereof
- Patent Title (中): 闪存装置及其编程方法
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Application No.: US12482590Application Date: 2009-06-11
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Publication No.: US08351262B2Publication Date: 2013-01-08
- Inventor: Jin-Sung Park
- Applicant: Jin-Sung Park
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR2007-39417 20070423
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A nonvolatile memory device that includes first and second storage areas, and a control logic configured to control the first and second storage areas, wherein when a program operation of the first storage area is passed before a program operation of the second storage area is passed, the control logic completes the program operation of the first storage area and continues the program operation of the second storage area is provided.
Public/Granted literature
- US20090244983A1 FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF Public/Granted day:2009-10-01
Information query
